sep-24-2003 1 BAW101... silicon switching diode ? electrically insulated high-voltage medium-speed diodes BAW101 type package configuration marking BAW101 sot143 parallel jps maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 300 v peak reverse voltage v rm 300 forward current i f 250 ma peak forward current i fm 500 surge forward current, t = 1 s i fs 4.5 a total power dissipation t s 35c p tot 350 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) BAW101 r thjs 330 k/w 1 for calculation of r thja please refer to application note thermal resistance
sep-24-2003 2 BAW101... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a v (br) 300 - - v reverse current v r = 250 v v r = 250 v, t a = 150 c i r - - - - 0.15 50 a forward voltage i f = 100 ma v f - - 1.3 v ac characteristics diode capacitance v r = 0 v, f = 1 mhz c t - 6 - pf reverse recovery time i f = 10 ma, i r = 10 ma, measured at i r = 1ma, r l = 100 ? t rr - 1 - s test circuit for reverse recovery time ehn00019 f d.u.t. oscillograph pulse generator: t p = 10 s, d = 0.05, t r = 0.6ns, r i = 50 ? oscillograph: r = 50 ? , t r = 0.35ns, c 1pf
sep-24-2003 3 BAW101... reverse current i r = ? ( t a ) v r = 250v baw 101 ehb00104 max. typ. 2 10 5 10 1 4 3 5 10 10 5 r 5 na 10 0 50 100 t a ?c 150 forward voltage v f = ? ( t a ) i f = parameter -40 -20 0 20 40 60 80 100 120 c 150 t a 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v 1 v f 10ma 100ma forward current i f = ? ( v f ) t a = 25c 0 1.0 2.0 baw 101 ehb00103 a v f v 5 5 -3 10 -2 10 10 -1 0 10 f forward current i f = ? ( t s ) BAW101 0 15 30 45 60 75 90 105 120 c 150 t s 0 50 100 150 200 ma 300 i f
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